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Last Updated: April 24, 2024

Patent: 6,307,731


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Summary for Patent: 6,307,731
Title: Dielectric capacitor and memory and method of manufacturing the same
Abstract:Provided are a dielectric capacitor, in which micorfabrication is easily performed, a memory and a method of manufacturing the dielectric capacitor and the memory. A bottom electrode, a dielectric film and a top electrode are sequentially provided on a substrate portion. The bottom electrode comprises an adhesive layer including IrHf, a precious metal layer including Ir, an oxygen inclusion layer including IrHfO and, a precious metal layer including Ir in sequence on the substrate portion. The top electrode comprises, a precious metal layer including Ir and an oxygen inclusion layer including IrHfO in sequence on the dielectric film. Since platinum is not used for the top electrode and the bottom electrode, microfabrication thereof is facilitated Further, the top electrode is deposited before crystallizing or crystal growing the dielectric film, and thereby the top electrode and the bottom electrode can be processed by etching. As a result, etching can be performed on its smooth surface, allowing easier microfabrication.
Inventor(s): Katori; Kenji (Kanagawa, JP)
Assignee: Sony Corporation (Tokyo, JP)
Application Number:09/584,140
Patent Claims:see list of patent claims

Details for Patent 6,307,731

Applicant Tradename Biologic Ingredient Dosage Form BLA Approval Date Patent No. Expiredate
Pharmalucence Inc MICROLITE radiolabeled albumin technetium tc-99m albumin colloid kit 018263 03/25/1983 ⤷  Try a Trial 2019-06-02
>Applicant >Tradename >Biologic Ingredient >Dosage Form >BLA >Approval Date >Patent No. >Expiredate

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