Claims for Patent: 6,307,731

Summary for Patent: 6,307,731

Title:	Dielectric capacitor and memory and method of manufacturing the same
Abstract:	Provided are a dielectric capacitor, in which micorfabrication is easily performed, a memory and a method of manufacturing the dielectric capacitor and the memory. A bottom electrode, a dielectric film and a top electrode are sequentially provided on a substrate portion. The bottom electrode comprises an adhesive layer including IrHf, a precious metal layer including Ir, an oxygen inclusion layer including IrHfO and, a precious metal layer including Ir in sequence on the substrate portion. The top electrode comprises, a precious metal layer including Ir and an oxygen inclusion layer including IrHfO in sequence on the dielectric film. Since platinum is not used for the top electrode and the bottom electrode, microfabrication thereof is facilitated Further, the top electrode is deposited before crystallizing or crystal growing the dielectric film, and thereby the top electrode and the bottom electrode can be processed by etching. As a result, etching can be performed on its smooth surface, allowing easier microfabrication.
Inventor(s):	Katori; Kenji (Kanagawa, JP)
Assignee:	Sony Corporation (Tokyo, JP)
Application Number:	09/584,140
Patent Claims:	1. A dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, the second electrode comprising: a second electrode oxygen inclusion layer including an oxygen inclusion material made of at least one selected from a precious metal element group consisting of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh) and palladium (Pd), at least one selected from a transition metal element group consisting of hafnium (Hf), tantalum (Ta), zirconium (Zr), niobium (Nb), vanadium (V), molybdenum (Mo), tungsten (W) and a rare-earth element, and oxygen (O), wherein the composition formula of the oxygen inclusion material is expressed by M.sub.Ia M.sub.IIb O.sub.c, where an element in the precious metal element group is M.sub.I and an element in the transition metal element group is M.sub.II and its composition range is 90.gtoreq.a.gtoreq.4, 15.gtoreq.b.gtoreq.2, c.gtoreq.4, a+b+c=100 in atom %. 2. A dielectric capacitor according to claim 1, wherein the second electrode further comprises a second electrode precious metal layer including at least one selected from the precious metal element group, which is provided between the second electrode oxygen inclusion layer and the dielectric film. 3. A dielectric capacitor according to claim 1, wherein the first electrode comprises a first electrode oxygen inclusion layer including an oxygen inclusion material made of at least one selected from the precious metal element group, at least one selected from the transition metal element group and oxygen, and the composition formula of the oxygen inclusion material is expressed by M.sub.IIId M.sub.IVe O.sub.f, where an element in the precious metal element group is M.sub.III and an element in the transition metal element group is M.sub.IV, and its composition range is 90.gtoreq.d.gtoreq.4, 15.gtoreq.e.gtoreq.2, f.gtoreq.4, d+e+f=100 in atom %. 4. A dielectric capacitor according to claim 3, wherein the first electrode further comprises: a first electrode precious metal layer which is provided between the first electrode oxygen inclusion layer and the substrate portion, the first electrode precious metal layer including at least one selected from the precious metal element group, and an adhesive layer which is provided between the first electrode precious metal layer and the substrate portion. 5. A dielectric capacitor according to claim 4, wherein the adhesive layer includes an alloy consisting of at least one selected from the precious metal element group and at least one selected from the transition metal element group, and the composition formula of the alloy is expressed by M.sub.Vg M.sub.VIh, where an element from the precious metal element group is M.sub.V and an element from the transition metal element group is M.sub.VI, and its composition range is 97.gtoreq.g.gtoreq.90, 10.gtoreq.h.gtoreq.3, g+h=100 in atom %. 6. A dielectric capacitor according to claim 4, wherein the adhesive layer includes at least one selected from a group consisting of titanium (Ti), zirconium, hafnium, tantalum, niobium, chromium (Cr), molybdenum and tungsten. 7. A dielectric capacitor according to claim 3, wherein the first electrode further includes another first electrode precious metal layer including at least one selected from the precious metal element group, which is provided between the dielectric film and the first electrode oxygen inclusion layer. 8. A dielectric capacitor according to claim 1, wherein the dielectric film is composed of a ferroelectric including layer structure oxide containing bismuth (Bi). 9. A dielectric capacitor according to claim 1, wherein the dielectric film includes layer structure oxide consisting of bismuth, at least one selected from a group consisting of strontium (Sr), calcium (Ca) and barium (Ba), at least one selected from a group consisting of tantalum and niobium, and oxygen (O), and the composition formula of the layer structure oxide is expressed by Bi.sub.x (Sr, Ca, Ba).sub.y (Ta, Nb).sub.2 O.sub.9+z, and its composition range is 2.50.gtoreq.x.gtoreq.1.70, 1.20.gtoreq.y.gtoreq.0.60, -1.00.gtoreq.z.gtoreq.1.00 in mole ratio. 10. A dielectric capacitor according to claim 9, wherein the layer structure oxide is expressed by the composition formula, Bi.sub.x Sr.sub.y Ta.sub.2 O.sub.9+z, and its composition range is 2.50.gtoreq.x.gtoreq.1.70, 1.20.gtoreq.y.gtoreq.0.60, -1.00.gtoreq.z.gtoreq.1.00 in mole ratio. 11. A memory comprising: a dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, the second electrode having, a second electrode oxygen inclusion layer including an oxygen inclusion material, made of at least one selected from a precious metal element group consisting of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh) and palladium (Pd), at least one selected from a transition metal element group consisting of hafnium (Hf), tantalum (Ta), zirconium (Zr), niobium (Nb), vanadium (V), molybdenum (Mo), tungsten (W) and a rare-earth element, and oxygen (O), wherein the composition formula of the oxygen inclusion material is expressed by M.sub.Ia M.sub.IIb O.sub.c, where an element in the precious metal element group is M.sub.I and an element in the transition metal element group is M.sub.II, and its composition range is 90.gtoreq.a.gtoreq.4, 15.gtoreq.b.gtoreq.2, c.gtoreq.4, a+b+c=100 in atom %. 12. A memory according to claim 11, further comprising a transistor which is connected to the first electrode through a plug layer comprising at least part of the substrate portion. 13. A method of manufacturing a dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, wherein the step of forming the second electrode includes, a step of depositing a first layer for the second electrode by using an oxygen inclusion material made of at least one selected from a precious metal element group consisting of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh) and palladium (Pd), at least one selected from a transition metal element group consisting of hafnium (Hf), tantalum (Ta), zirconium (Zr), niobium (Nb), vanadium (V), molybdenum (Mo), tungsten (W) and a rare-earth element, and oxygen (O), wherein the oxygen inclusion material is expressed by the composition formula, M.sub.Ia M.sub.IIb O.sub.c, where an element in the precious metal element group is M.sub.I and an element in the transition metal element group is M.sub.II, and its composition range is 90.gtoreq.a.gtoreq.4, 15.gtoreq.b.gtoreq.2, c.gtoreq.4, a+b+c=100 in atom %. 14. A method of manufacturing a dielectric capacitor according to claim 13, wherein the step of forming the second electrode further includes the steps of, depositing a second layer for the second electrode by using at least one selected from the precious metal element group before depositing the first layer for the second electrode, and depositing the first layer for the second electrode on the second layer. 15. A method of manufacturing a dielectric capacitor according to claim 13, the dielectric capacitor including an adhesive layer in the first electrode, wherein the step of forming the first electrode further includes the steps of, depositing a first layer for the first electrode, which is to construct the adhesive layer, on the substrate portion, depositing a second layer for the first electrode by using at least one selected from the precious metal element group on the first layer for the first electrode, and depositing a third layer for the first electrode on the second layer for the first electrode by using an oxygen inclusion material made of at least one selected from the precious metal element group, at least one selected from the transition metal element group and oxygen, the oxygen inclusion material being expressed by the composition formula, M.sub.IIId M.sub.IVe O.sub.f, where an element in the precious metal element group is M.sub.III and an element in the transition metal element group is M.sub.Iv, and its composition range being 90.gtoreq.d.gtoreq.4, 15.gtoreq.e.gtoreq.2, f.gtoreq.4, d+e+f=100 in atom %. 16. A method of manufacturing a dielectric capacitor according to claim 15, wherein the step of forming a dielectric film includes the steps of, performing oxygen thermal annealing in an oxygen inclusion atmosphere, and performing inert gas thermal annealing in an inert gas atmosphere at a temperature equal to or higher than that in the oxygen thermal annealing after the oxygen thermal annealing. 17. A method of manufacturing a dielectric capacitor according to claim 15, wherein the step of forming a dielectric film includes the steps of, performing oxygen thermal annealing in an oxygen inclusion atmosphere, and reducing oxide generated in a part of the first layer, the second layer and the third layer for the first electrode in the oxygen thermal annealing after the oxygen thermal annealing. 18. A method of manufacturing a dielectric capacitor according to claim 17, wherein the step of forming the dielectric film further includes a step of performing inert gas thermal annealing in an inert gas atmosphere after the reduction. 19. A method of manufacturing a dielectric capacitor according to claim 18, wherein the step of forming the dielectric film still further includes a step of performing another oxygen thermal annealing in an oxygen inclusion atmosphere at a temperature lower than a temperature at which a substance reduced in the reduction oxidizes prior to the inert gas thermal annealing after the reduction. 20. A method of manufacturing a dielectric capacitor according to claim 13, wherein the step of forming the dielectric film includes the steps of, depositing an amorphous or microlite dielectric antecedent film and, then, crystallizing or crystal growing the dielectric antecedent film, and depositing the first layer for the second electrode on the dielectric antecedent film before crystallizing or crystal growing the dielectric antecedent film after the step of depositing the dielectric antecedent film. 21. A method of manufacturing a dielectric capacitor according to claim 20, wherein the first layer for the second electrode, and the dielectric antecedent film are processed by etching before crystallizing or crystal growing the dielectric antecedent film after the step of depositing the first layer for the second electrode. 22. A method of manufacturing a memory, the memory having a dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, the step of forming the second electrode comprising: a step of depositing a first layer for the second electrode using an oxygen inclusion material made of at least one selected from a precious metal element group consisting of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh) and palladium (Pd), at least one selected from a transition metal element group consisting of hafnium (Hf), tantalum (Ta), zirconium (Zr), niobium (Nb), vanadium (V), molybdenum (Mo), tungsten (W) and a rare-earth element, and oxygen (O), the oxygen inclusion material being expressed by the composition formula, M.sub.Ia M.sub.IIb O.sub.c, where an element in the precious metal element group is M.sub.I and an element in the transition metal element group is M.sub.II and its composition range being 90.gtoreq.a.gtoreq.4, 15.gtoreq.b.gtoreq.2, c.gtoreq.4, a+b+c=100 in atom %. 23. A method of manufacturing a memory according to claim 22, the memory including an adhesive layer in the first electrode, in which a transistor is connected to the dielectric capacitor through a plug layer comprising at least part of the substrate portion, wherein the step of forming the first electrode includes the steps of, depositing a first layer for the first electrode, which is to construct the adhesive layer, on the substrate portion, depositing a second layer for the first electrode by using at least one selected from the precious metal element group on the first layer, and depositing a third layer for the first electrode on the second layer by using an oxygen inclusion material made of at least one selected from the precious metal element group, at least one selected from the transition metal element group and oxygen, the oxygen inclusion material being expressed by the composition formula, M.sub.IIId M.sub.IVe O.sub.f, where an element in the precious metal element group is M.sub.III and an element in the transition metal element group is M.sub.Iv, and its composition range being 90.gtoreq.d.gtoreq.4, 15.gtoreq.e.gtoreq.2, f.gtoreq.4, d+e+f=100 in atom %, and the step of forming the dielectric film includes the steps of, performing oxygen thermal annealing in an oxygen inclusion atmosphere and, then, performing inert gas thermal annealing in an inert gas atmosphere at a temperature equal to or higher than the temperature in the oxygen thermal annealing, and performing hydrogen annealing in a hydrogen inclusion atmosphere in order to recover a function of the transistor after the inert gas thermal annealing. 24. A method of manufacturing a memory according to claim 22, the memory including an adhesive layer in the first electrode, in which a transistor is connected to the dielectric capacitor through a plug layer comprising at least part of the substrate, wherein the step of forming the first electrode includes the steps of, depositing a first layer for the first electrode, which is to construct the adhesive layer, on the substrate portion, depositing a second layer for the first electrode by using at least one selected from the precious metal element group on the first layer, and depositing a third layer for the first electrode on the second layer by using an oxygen inclusion material made of at least one selected from the precious metal element group, at least one selected from the transition metal element group and oxygen, the oxygen inclusion material being expressed by the composition formula, M.sub.IIId M.sub.IVe O.sub.f, where an element in the precious metal element group is M.sub.III and an element in the transition metal element group is M.sub.Iv, and its composition range being 90.gtoreq.d.gtoreq.4, 15.gtoreq.e.gtoreq.2, f.gtoreq.4, d+e+f=100 in atom %, and the step of forming the dielectric film includes the steps of, performing oxygen thermal annealing in an oxygen inclusion atmosphere and, then, reducing oxide generated in part of the first layer, the second layer and the third layer for the first electrode in the oxygen thermal annealing, and performing hydrogen annealing in a hydrogen inclusion atmosphere in order to recover a function of the transistor after the reduction. 25. A method of manufacturing a memory according to claim 22, wherein the step of forming the dielectric film includes the steps of, forming an amorphous or microlite dielectric antecedent film and, then, crystallizing or crystal growing the dielectric antecedent film by thermal annealing, and depositing the first layer for the second electrode on the dielectric antecedent film before crystallizing or crystal growing the dielectric antecedent film after depositing the dielectric antecedent film.

Details for Patent 6,307,731

Applicant	Tradename	Biologic Ingredient	Dosage Form	BLA	Approval Date	Patent No.	Expiredate
Pharmalucence Inc	MICROLITE	radiolabeled albumin technetium tc-99m albumin colloid kit		018263	03/25/1983		2019-06-02