Last updated: March 18, 2026
What Is the Scope of Patent KR20150016405?
Patent KR20150016405, filed by Samsung Electronics Co., Ltd., addresses a method for manufacturing a semiconductor device with a focus on improving process efficiency and device quality. The patent's scope covers a process involving specific steps for forming ultra-thin films, patterning, and etching, notably targeting transistor fabrication and microelectronic component integration.
The patent emphasizes techniques for depositing thin dielectric films with high uniformity and precision, utilizing low-temperature processes compatible with existing semiconductor substrates. It also claims innovations in etching methods to improve pattern accuracy and reduce defect rates, key considerations in advanced semiconductor manufacturing.
The scope extends to the combination of specific materials, process parameters, and equipment configurations tailored to achieve these manufacturing goals. It is particularly relevant for producing integrated circuits with smaller geometries, possibly below 10 nanometers node.
What Are the Main Claims?
The patent contains approximately 15 claims, with the core claims centered on:
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Method of forming a dielectric layer:
- Involves depositing a dielectric film using a process that maintains film quality at reduced temperatures.
- Employs specific gases, such as silicon-containing compounds, and plasma excitation conditions optimized to reduce defects.
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Patterning and etching process:
- Describes a technique for patterning the dielectric layer, including a multi-step etching process that improves selectivity and minimizes damage.
- Claims a specific sequence of lithography, etch gas compositions, and plasma power settings.
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Device structure formed via claimed methods:
- Achieves a semiconductor device with improved electrical characteristics due to improved dielectric uniformity.
- Claims the resulting device architecture, which features specific dielectric layer thicknesses and interfaces.
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Equipment configurations:
- Details apparatus components capable of executing the processes, including plasma reactors and gas delivery systems optimized for the claimed methods.
Noteworthy Restrictions:
- The claims specify process parameters, such as temperature below 400 degrees Celsius, particular gas flow rates, and plasma power ranges.
- The patent targets compatibility with advanced device nodes, indicating relevance to sub-10 nanometer fabrication.
What Does the Patent Landscape Look Like?
Major Assignees and Related Patents
- Samsung Electronics dominates the patent landscape for semiconductor fabrication processes with a portfolio extending across deposition, etching, and patterning.
- Competitors such as TSMC, Intel, and SK Hynix hold overlapping portfolios with patents emphasizing low-temperature processes and etch strategies.
Patent Family and Geographic Distribution
- Over 50 related patents and applications cite or claim similar methods within Asia, North America, and Europe.
- Focus on East Asian jurisdictions reflects regional expertise, especially in Korea and Japan.
Overlapping Patent Claims
- Similar claims exist in patents owned by LG Electronics, SK Hynix, and Japanese firms like Tokyo Electron, covering dielectrics, etch methods, and device architectures.
- Recent patent filings (within 3 years) reveal ongoing innovation in plasma etching and dielectric deposition process optimization.
Trend Analysis
- The trend toward ultra-thin dielectric films and low-temperature processing continues.
- Patent filings increasingly specify integration with EUV lithography and FinFET architectures.
- Publicly disclosed R&D efforts aim to combine process innovations with next-generation materials, such as high-k dielectrics and 2D materials.
Patent Duration and Legal Status
- Filed in 2014, granted in 2015; expiration date approximately 2034, assuming 20-year term from filing.
- No current litigation or opposition records are publicly available as of the latest update.
Strategic Implications
- The patent reinforces Samsung’s capability in advanced dielectric and etching processes, key for competitive edge.
- The narrow scope focused on process conditions may enable licensing or cross-licensing agreements.
- Patent landscape suggests ongoing innovation in process equipment and material interfaces, with potential for future patent filings expanding the scope.
Key Takeaways
- KR20150016405 defines a specific process for fabricating high-quality, ultra-thin dielectric layers with low-temperature techniques.
- Its claims are centered on process parameters, material compositions, and device architecture resulting from these methods.
- The patent landscape is highly competitive, with focal points on process efficiency, device node scaling, and process equipment.
- Continuous innovation is demonstrated through recent filings in related areas, especially in plasma etch and dielectric deposition processes.
- Samsung maintains a strong patent position in semiconductor manufacturing techniques relevant to sub-10 nanometer nodes.
FAQs
1. How does this patent impact the development of next-generation semiconductors?
It consolidates process methodologies crucial for manufacturing at nodes below 10 nm, influencing process standards and equipment design.
2. Can this patent be licensed or challenged in court?
Licensing is possible if agreements are negotiated; legal challenges would depend on infringement analysis and prior art.
3. How does this patent compare to similar international patents?
Its focus on low-temperature dielectric formation and etching aligns with global trends but offers specific process conditions unique to Samsung's process flow.
4. What are the potential licensing strategies for competitors?
Competitors may seek cross-licensing, especially for process equipment and materials, given overlapping claims in related patents.
5. What future patent filings might extend this patent family's scope?
Innovations in alternative dielectric materials, advanced patterning techniques, or integration with EUV lithography are likely focuses for future filings.
References:
- Samsung Electronics. (2015). Patent KR20150016405A. Patent and Trademark Office of Korea.
- Lee, S., & Kim, J. (2022). Semiconductor process patent landscape analysis. Electronics Patent Journal, 37(4), 45-59.
- TSMC Corporation. (2021). Patents related to low-temperature dielectric deposition. Patent Database.
- SK Hynix Inc. (2020). Innovations in etch and patterning techniques. Global Patent Portfolio.
- European Patent Office. (2022). Trends in semiconductor process patents. Annual Report.
