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|Title:||HDP-CVD methodology for forming PMD layer|
|Abstract:||A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.|
|Inventor(s):||Chen; Yao-Hsiang (Hsin-Chu, TW)|
|Assignee:||Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu, TW)|
Patent Claim Types:|
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Back Citations: 3rd percentile
Forward Citations: 1st percentile
|Country||Document Number||Estimated Expiration||Supplementary Protection Certificate||SPC Country||SPC Expiration|
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