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Serving hundreds of leading biopharmaceutical companies globally:

Harvard Business School
Daiichi Sankyo
Healthtrust
AstraZeneca
Boehringer Ingelheim
Colorcon
McKinsey
McKesson
Julphar

Generated: June 18, 2018

DrugPatentWatch Database Preview

Details for Patent: 7,265,009

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Summary for Patent: 7,265,009
Title:HDP-CVD methodology for forming PMD layer
Abstract: A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.
Inventor(s): Chen; Yao-Hsiang (Hsin-Chu, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu, TW)
Application Number:11/067,043
Patent Claim Types:
see list of patent claims
Use; Process;

Drugs Protected by US Patent 7,265,009

Applicant Tradename Generic Name Dosage NDA Approval Date TE Type RLD RS Patent No. Patent Expiration Product Substance Delist Req. Patented / Exclusive Use Patent Submitted
Applicant Tradename Generic Name Dosage NDA Approval Date TE Type RLD RS Patent No. Patent Expiration Product Substance Delist Req. Patented / Exclusive Use Patent Submitted

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International Family Members for US Patent 7,265,009

Country Document Number Estimated Expiration Supplementary Protection Certificate SPC Country SPC Expiration
China 100380624 ➤ Try a Free Trial
China 1832125 ➤ Try a Free Trial
Taiwan 200631099 ➤ Try a Free Trial
Taiwan I277155 ➤ Try a Free Trial
Country Document Number Estimated Expiration Supplementary Protection Certificate SPC Country SPC Expiration

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Serving hundreds of leading biopharmaceutical companies globally:

Boehringer Ingelheim
Dow
US Army
US Department of Justice
Colorcon
McKesson
Citi
Chinese Patent Office
Queensland Health

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