Details for Patent: 7,265,009
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Summary for Patent: 7,265,009
Title: | HDP-CVD methodology for forming PMD layer |
Abstract: | A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate. |
Inventor(s): | Chen; Yao-Hsiang (Hsin-Chu, TW) |
Assignee: | Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu, TW) |
Application Number: | 11/067,043 |
Patent Claim Types: see list of patent claims | Use; Process; |
Drugs Protected by US Patent 7,265,009
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International Family Members for US Patent 7,265,009
Country | Patent Number | Estimated Expiration | Supplementary Protection Certificate | SPC Country | SPC Expiration |
---|---|---|---|---|---|
China | 100380624 | ⤷ Try a Trial | |||
China | 1832125 | ⤷ Try a Trial | |||
Taiwan | 200631099 | ⤷ Try a Trial | |||
Taiwan | I277155 | ⤷ Try a Trial | |||
>Country | >Patent Number | >Estimated Expiration | >Supplementary Protection Certificate | >SPC Country | >SPC Expiration |