Details for Patent: 7,265,009

Summary for Patent: 7,265,009

Title:	HDP-CVD methodology for forming PMD layer
Abstract:	A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by a gap; forming a PMD layer according to an HDP-CVD process over the at least two overlying semiconductor structures without applying a chucking bias Voltage to hold the semiconductor substrate.
Inventor(s):	Yao-Hsiang Chen
Assignee:	Taiwan Semiconductor Manufacturing Co TSMC Ltd
Application Number:	US11/067,043
Patent Claim Types: see list of patent claims	Use; Process;

Drugs Protected by US Patent 7,265,009

Applicant	Tradename	Generic Name	Dosage	NDA	Approval Date	TE	Type	RLD	RS	Patent No.	Patent Expiration	Product	Substance	Delist Req.	Patented / Exclusive Use	Submissiondate

International Family Members for US Patent 7,265,009

Country	Patent Number	Estimated Expiration	Supplementary Protection Certificate	SPC Country	SPC Expiration
China	100380624
China	1832125
Taiwan	200631099
Taiwan	I277155