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|Title:||Method of forming a contact plug in a semiconductor device|
|Abstract:||A contact plug is formed in a semiconductor device having a silicon substrate having a gate electrode, a junction area and an insulating interlayer. A contact hole is formed to expose the junction area. A plasma process is carried out with respect to a resultant substrate, thereby removing natural oxides created on an exposed surface of the junction area. A first silicon layer is deposited on the contact hole and on the insulating interlayer. A heat-treatment process is carried out with respect to the first silicon layer so as to grow the amorphous silicon into the epitaxial silicon. A second silicon layer is deposited on the first silicon layer.|
|Inventor(s):||Park; Sung Eon (Seoul, KR)|
|Assignee:||Hynix Semiconductor Inc. (Kyoungki-do, KR)|
Patent Claim Types:|
see list of patent claims
|Use; Process; Device;|
Back Citations: 2nd percentile
Forward Citations: 3rd percentile
|Patent Number||Expiration Date|
|7,049,230||May 23, 2014|
|Country||Document Number||Estimated Expiration||Supplementary Protection Certificate||SPC Country||SPC Expiration|
|South Korea||100650715||► subscribe|
|South Korea||100668821||► subscribe|
|South Korea||20050050711||► subscribe|
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