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Details for Patent: 7,049,230

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Summary for Patent: 7,049,230

Title:Method of forming a contact plug in a semiconductor device
Abstract: A contact plug is formed in a semiconductor device having a silicon substrate having a gate electrode, a junction area and an insulating interlayer. A contact hole is formed to expose the junction area. A plasma process is carried out with respect to a resultant substrate, thereby removing natural oxides created on an exposed surface of the junction area. A first silicon layer is deposited on the contact hole and on the insulating interlayer. A heat-treatment process is carried out with respect to the first silicon layer so as to grow the amorphous silicon into the epitaxial silicon. A second silicon layer is deposited on the first silicon layer.
Inventor(s): Park; Sung Eon (Seoul, KR)
Assignee: Hynix Semiconductor Inc. (Kyoungki-do, KR)
Application Number:10/984,494
Patent Claim Types:
see list of patent claims
Use; Process; Device;
Patent Metrics:
Source: PatentQuant.com
Field: Semiconductors
Back Citations: 2nd percentile
Forward Citations: 3rd percentile

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Premature patent expiration for: 7,049,230

Expiration due to failure to pay maintenance fee

Patent Number Expiration Date
7,049,230 May 23, 2014

Foreign Priority and PCT Information for Patent: 7,049,230

Foriegn Application Priority Data
Foreign Country Foreign Patent Number Foreign Patent Date
South Korea10-2003-0084311Nov 26, 2003
South Korea10-2003-0084313Nov 26, 2003

International Patent Family for Patent: 7,049,230

Country Document Number Estimated Expiration Supplementary Protection Certificate SPC Country SPC Expiration
South Korea100668821► subscribe
South Korea20050050713► subscribe
South Korea100650715► subscribe
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The estimated expiration dates shown above are derived by simply adding 20 years to the priority date.
Due to the complexity of determining patent expirations even in a single country, compounded by the diversity of global patent laws, it is advisable to have patent counsel verify freedom to operate.

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