Details for Patent: 7,049,230
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Summary for Patent: 7,049,230
Title: | Method of forming a contact plug in a semiconductor device |
Abstract: | A contact plug is formed in a semiconductor device having a silicon substrate having a gate electrode, a junction area and an insulating interlayer. A contact hole is formed to expose the junction area. A plasma process is carried out with respect to a resultant substrate, thereby removing natural oxides created on an exposed surface of the junction area. A first silicon layer is deposited on the contact hole and on the insulating interlayer. A heat-treatment process is carried out with respect to the first silicon layer so as to grow the amorphous silicon into the epitaxial silicon. A second silicon layer is deposited on the first silicon layer. |
Inventor(s): | Park; Sung Eon (Seoul, KR) |
Assignee: | Hynix Semiconductor Inc. (Kyoungki-do, KR) |
Application Number: | 10/984,494 |
Patent Claim Types: see list of patent claims | Use; Process; Device; |
Drugs Protected by US Patent 7,049,230
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Foreign Priority and PCT Information for Patent: 7,049,230
Foriegn Application Priority Data | ||
Foreign Country | Foreign Patent Number | Foreign Patent Date |
South Korea | 10-2003-0084311 | Nov 26, 2003 |
South Korea | 10-2003-0084313 | Nov 26, 2003 |
International Family Members for US Patent 7,049,230
Country | Patent Number | Estimated Expiration | Supplementary Protection Certificate | SPC Country | SPC Expiration |
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South Korea | 100650715 | ⤷ Try a Trial | |||
South Korea | 100668821 | ⤷ Try a Trial | |||
South Korea | 20050050711 | ⤷ Try a Trial | |||
South Korea | 20050050713 | ⤷ Try a Trial | |||
>Country | >Patent Number | >Estimated Expiration | >Supplementary Protection Certificate | >SPC Country | >SPC Expiration |