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Details for Patent: 6,238,994

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Summary for Patent: 6,238,994

Title: Method of creating a rough electrode (high surface area) from Ti and TiN and resulting article
Abstract:A technique for forming high surface area electrode or storage nodes for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous later if formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.
Inventor(s): Derderian; Garo J. (Boise, ID), Sandhu; Gurtej S. (Boise, ID)
Assignee: Micron Technology, Inc. (Boise, ID)
Application Number:09/041,917
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