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Details for Patent: 6,902,985

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Details for Patent: 6,902,985

Title: Method of forming a rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same
Abstract:A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.
Inventor(s): Derderian; Garo J. (Boise, ID), Sandhu; Gurtej S. (Boise, ID)
Assignee: Micron Technology, Inc. (Boise, ID)
Filing Date:Aug 08, 2002
Application Number:10/215,513
Claims:1. A method of forming a capacitor storage node, the method comprising: depositing a discontinuous first material layer on a substrate so as to define at least one area through which the substrate is exposed; depositing a substantially continuous second material layer over the discontinuous first material layer and the at least one area through which the substrate is exposed such that the substantially continuous second material layer exhibits a first thickness over the discontinuous first material layer and a second, lesser thickness over the at least one area through which the substrate is exposed.

2. The method according to claim 1, wherein depositing a discontinuous first material layer includes depositing a conductive discontinuous first material layer.

3. The method according to claim 1, wherein depositing a discontinuous first material layer includes depositing a semiconductive discontinuous first material layer.

4. The method according to claim 1, wherein depositing a discontinuous first material layer includes depositing a nonconductive discontinuous first material layer.

5. The method according to claim 1, wherein depositing a discontinuous first material layer includes collimated sputtering.

6. The method according to claim 5, wherein the collimated sputtering further includes defining a collimator ratio to be less than approximately 3:1.

7. The method according to claim 1, wherein depositing a discontinuous first material layer includes chemical vapor deposition of the discontinuous first material layer.

8. The method according to claim 1, further comprising forming the discontinuous first material layer and the substantially continuous second material layer out of the same material.

9. The method according to claim 1, further comprising depositing a dielectric material layer over the second material layer.

10. The method according to claim 9, further comprising depositing a conductive material layer over the dielectric material layer.

11. The method according to claim 1, wherein depositing a discontinuous first material layer on a substrate further includes depositing the nonconductive discontinuous first layer on a substrate of borophosphosilicate glass.

12. The method according to claim 1, wherein depositing a substantially continuous second material layer further includes depositing a substantially continuous layer of conductive material.

13. A method of forming a capacitor storage node, the method comprising: depositing a nonconductive discontinuous first material layer on a substrate so as to define at least one area through which the substrate is exposed; depositing a second material layer over the nonconductive discontinuous first material layer and the at least one area through which the substrate is exposed such that the second material layer exhibits a first thickness over the nonconductive discontinuous first material layer and a second, lesser thickness over the at least one area through which the substrate is exposed.

14. The method according to claim 13, wherein depositing a nonconductive discontinuous first material layer includes collimated sputtering.

15. The method according to claim 14, wherein the collimated sputtering further includes defining a collimator ratio to be less than approximately 3:1.

16. The method according to claim 13, wherein depositing a nonconductive discontinuous first material layer includes chemical vapor deposition of the nonconductive discontinuous first material layer.

17. The method according to claim 13, wherein depositing a second material layer includes depositing a conductive material layer.

18. The method according to claim 13, further comprising depositing a dielectric material layer over the second material layer.

19. The method according to claim 18, further comprising depositing a conductive material layer over the dielectric material layer.

20. The method according to claim 13, wherein depositing a second material layer includes depositing a conductive material layer.
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