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Details for Patent: 4,698,524

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Details for Patent: 4,698,524

Title: MESFET logic using integral diode level shifting
Abstract:A semiconductor logic circuit utilizing level shifting of input transistors away from a reference voltage level but shifting the output toward the reference voltage level to increase noise margin. The input signals may switch both the input transistors and the output transistors.
Inventor(s): Plagens; Mark R. (Richardson, TX)
Assignee: Honeywell Inc. (Minneapolis, MN)
Filing Date:Jul 16, 1986
Application Number:06/886,596
Claims:1. A semiconductor logic circuit comprising:

a first field effect transistor means having a drain terminal means, a gate terminal means, and a source terminal means, said first field effect transistor means drain terminal means being for electrical connection to a first voltage source and said first field effect transistor means gate terminal means being electrically connected to said first field effect transistor means source terminal means;

a second field effect transistor means having a drain terminal means, a gate terminal means, and a source terminal means, said second field effect transistor means drain terminal means being electrically connected to said first field effect transistor means source terminal means and said second field effect transistor means gate terminal means being for receiving input signals;

a first threshold device means having first and second terminal means between which current substantially flows only if any voltage occurring therebetween exceeds a threshold, said first threshold device means first terminal means being electrically connected to said second field effect transistor means source terminal means, said first threshold device means second terminal means being for electrical connection to a second voltage source;

a third field effect transistor means having a drain terminal means, a gate terminal means, and a source terminal means, said third field effect transistor means drain terminal means being for electrical connection to a third voltage source and said third field effect transistor means gate terminal means being electrically connected to said first field effect transistor means source terminal means;

a second threshold device means having first and second terminal means between which current substantially flows only if any voltage occurring therebetween exceeds a threshold, said second threshold device means first terminal means being electrically connected to said third field effect transistor means source means, said second threshold device means second terminal means being for providing output signals;

a fourth field effect transistor means having a drain terminal means, a gate terminal means, and a source terminal means, said fourth field effect transistor means drain terminal means being electrically connected to said second threshold device means second terminal means, said fourth field effect transistor means source terminal means being for electrical connection to a fourth voltage source;

a third threshold device means having first and second terminal means between which current substantially flows only if any voltage occurring therebetween exceeds a threshold, said third threshold device means first terminal means being electrically connected to said second field effect transistor means gate terminal means, and said third threshold device means second terminal means being electrically connected to said fourth field effect transistor means gate terminal means; and

a fifth field effect transistor means having a drain terminal means, a gate terminal means, and a source terminal means, said fifth field effect transistor means drain terminal means being electrically connected to said fourth field effect transistor means gate terminal means, said fifth field effect transistor means source terminal means being for electrical connection to a fifth voltage source, and said fifth field effect transistor means gate terminal means being electrically connected to said fifth field effect transistor means source terminal means.

2. The apparatus of claim 1 where, in addition to said second field effect transistor means, there is a further first plurality of field effect transistor means for receiving input signals each having a drain terminal means, a gate terminal means, and a source terminal means, each said drain terminal being electrically connected to said first field effect transistor means source terminal means and each source terminal means in said first plurality of field effect transistor means being electrically connected to said first threshold device means first terminal means, and each of said gate terminal means in said first plurality of field effect transistor means being for receiving input signals.

3. The apparatus of claim 1 wherein said first, second and third threshold device means are each diode means with an anode terminal means serving as first terminal means thereof and a cathode terminal means serving as a second terminal means thereof.

4. The apparatus of claim 2 which further comprises a plurality of threshold device means, in addition to said third threshold device means for receiving input signals, each of said threshold device means in said plurality thereof having first and second terminal means between which current substantially flows only if any voltage therebetween exceeds a threshold, each of said first terminal means of said plurality of threshold means being electrically connected to a corresponding one of said gate terminal means of said first plurality of field effect transistor means, and further comprising a second plurality of field effect transistor means each having a drain terminal means, a gate terminal means, and a source terminal means, each said drain terminal means of one of said second plurality of field effect transistor means being electrically connected to a corresponding one of said second terminal means of said plurality of threshold device means, each of said source terminal means of said second plurality of field effect transistor means being for electrical connection to said third voltage source, and each of said second terminal means of said plurality of threshold devices being electrically connected to a corresponding one of said gate terminal means of said second plurality of said field effect transistor means.

5. The apparatus of claim 3 wherein said first voltage source and said third voltage source are a common voltage source, and wherein said second voltage source, said fourth voltage source, and said fifth voltage source are a common voltage source.

6. The apparatus of claim 4 where said first, second and third threshold devices and each of said plurality of threshold device means are each diode means each having an anode means serving as said first terminal means and a cathode means serving as said second terminal means.

7. The apparatus of claim 6 wherein said first voltage source and said third voltage source are a common voltage source, and wherein said second voltage source, said fourth voltage source, and said fifth voltage source are a common voltage source.
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