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Last Updated: March 29, 2024

Patent: RE42864


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Summary for Patent: RE42864
Title:Rugged and fast power MOSFET and IGBT
Abstract: A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate.
Inventor(s): Tsukanov; Vladimir (Mountain View, CA), Zommer; Nathan (Fort Lauderdale, FL)
Assignee: IXYS Corporation (Santa Clara, CA)
Application Number:11/334,817
Patent Claims:see list of patent claims

Details for Patent RE42864

Applicant Tradename Biologic Ingredient Dosage Form BLA Approval Date Patent No. Expiredate
Aimmune Therapeutics, Inc. PALFORZIA peanut (arachis hypogaea) allergen powder Powder 125696 01/31/2020 ⤷  Try a Trial 2040-02-22
>Applicant >Tradename >Biologic Ingredient >Dosage Form >BLA >Approval Date >Patent No. >Expiredate

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