Patent: RE42864
✉ Email this page to a colleague
Summary for Patent: RE42864
Title: | Rugged and fast power MOSFET and IGBT |
Abstract: | A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate. |
Inventor(s): | Tsukanov; Vladimir (Mountain View, CA), Zommer; Nathan (Fort Lauderdale, FL) |
Assignee: | IXYS Corporation (Santa Clara, CA) |
Application Number: | 11/334,817 |
Patent Claims: | see list of patent claims |
Details for Patent RE42864
Applicant | Tradename | Biologic Ingredient | Dosage Form | BLA | Approval Date | Patent No. | Expiredate |
---|---|---|---|---|---|---|---|
Aimmune Therapeutics, Inc. | PALFORZIA | peanut (arachis hypogaea) allergen powder | Powder | 125696 | 01/31/2020 | ⤷ Try a Trial | 2040-02-22 |
>Applicant | >Tradename | >Biologic Ingredient | >Dosage Form | >BLA | >Approval Date | >Patent No. | >Expiredate |